The Fact About Germanium That No One Is Suggesting
≤ 0.15) is epitaxially developed on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and after that the composition is cycled by way of oxidizing and annealing levels. As a result of preferential oxidation of Si above Ge [68], the original Si1–Value. Interestingly, the team discovered that escalating the Si cap thickness